| Part Number | K4N51163QZ |
| Manufacturer | Samsung |
| Title | 512Mbit gDDR2 SDRAM |
| Description | FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achie... |
| Features |
• 1.8V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • 4 Banks operation • Posted CAS • Programmable CAS Letency : 5, 6, 7 • Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6 • Write Latency (WL) = Read Laten... |
| Datasheet |
 K4N51163QZ Datasheet
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