| Part Number | STPSC20H12-Y |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | silicon carbide power Schottky diode |
| Description | The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material ... |
| Features |
• AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min... |
| Datasheet |
 STPSC20H12-Y Datasheet
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