| Part Number | STPSC10H12G2Y-TR |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | silicon carbide power Schottky diode |
| Description | This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band... |
| Features |
• AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • Low VF • D²PAK HV creepage distance (anode to cathode) = 5.... |
| Datasheet |
 STPSC10H12G2Y-TR Datasheet 372.40KB |
