| Part Number | STGYA120M65DF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | IGBT |
| Description | E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M se... |
| Features |
• Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 120 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance... |
| Datasheet |
 STGYA120M65DF2 Datasheet 2.03MB |
