| Part Number | STGD6M65DF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | IGBT |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which r... |
| Features |
• Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 6 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal res... |
| Datasheet |
 STGD6M65DF2 Datasheet
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