| Part Number | STGB50H65FB2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | IGBT |
| Description | E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of t... |
| Features |
• Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient C(2, TAB) G(1) Applications • Welding... |
| Datasheet |
 STGB50H65FB2 Datasheet 651.63KB |
