| Part Number | SCTW60N120G2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | Silicon carbide Power MOSFET |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device fe... |
| Features |
Order code
VDS
RDS(on) max.
ID
SCTW60N120G2
1200 V
52 mΩ
60 A
• Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • S... |
| Datasheet |
 SCTW60N120G2 Datasheet
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