| Part Number | SCTW100N65G2AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | silicon carbide Power MOSFET |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device fe... |
| Features |
Order code SCTW100N65G2AG
VDS 650 V
RDS(on) max. 26 mΩ
ID 100 A
HiP247
3 2 1
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capabilit... |
| Datasheet |
 SCTW100N65G2AG Datasheet
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