| Part Number | SCTH90N65G2V-7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | Silicon carbide Power MOSFET |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device fe... |
| Features |
Order code
VDS
RDS(on) max.
SCTH90N65G2V-7
650 V
24 mΩ
• Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitances ID 116 A Applications •... |
| Datasheet |
 SCTH90N65G2V-7 Datasheet
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