Part Number | SCTH40N120G2V-7 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Title | Silicon carbide Power MOSFET |
Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device fe... |
Features |
Order code
VDS
RDS(on) max.
ID
SCTH40N120G2V-7
1200 V
100 mΩ
36 A
• Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source Kelv... |
Datasheet | SCTH40N120G2V-7 Datasheet |