Part Number | RF2L42008CG2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Title | RF power LDMOS transistor |
Description | The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM application... |
Features |
Order code
Frequency
VDD
POUT
Gain Efficiency
RF2L42008CG2
3600 MHz
28 V
8W
14.5 dB
47%
• High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Large positive and negative gate-sourc... |
Datasheet | RF2L42008CG2 Datasheet |