| Part Number | LET9002 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| Description | The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industri... |
| Features |
DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 0.25 4 150 -65 to +150 Unit V V A W °C °C
THERMAL ...
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| Datasheet |
 LET9002 Datasheet 40.75KB |
