| Part Number | LET21008 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| Description | The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band com... |
| Features |
ge Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 2.0 TBD 150 -65 to +150 Unit V V A W °C °C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resis...
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| Datasheet |
 LET21008 Datasheet
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