| Part Number | LET21004 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| Description | The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band com... |
| Features |
ltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 TBD 150 -65 to +150 Unit V V A W °C °C
THERMAL DATA (TCASE = 70 °C)
Rth(j-c) Junction -...
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| Datasheet |
 LET21004 Datasheet 40.93KB |
