Part Number | RJP63K2DPK-M0 |
Manufacturer | Renesas (https://www.renesas.com/) |
Title | N-Channel IGBT |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ... |
Features |
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max R07DS0469EJ0200 Rev.2.00 Jun 15, ... |
Datasheet | RJP63K2DPK-M0 Datasheet |