| Part Number | NE55410GR |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Title | N-CHANNEL SILICON POWER LDMOS FET |
| Description | The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/d... |
| Features |
• Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package • Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, ... |
| Datasheet |
 NE55410GR Datasheet
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