| Part Number | PDM6T20V3 |
| Manufacturer | Prisemi |
| Title | N- & P-Channel MOSFET |
| Description | The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) MOSFET Product Summary RDS(on)(Ω) N-Channel 20 0.043@ VG... |
| Features |
S VDS =0V,VGS=±8V
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID =250μA
VGS=4.5V, ID =2.8A
Static Drain-Source On-Resistance2
RDS(ON)
VGS=2.5V, ID =2.0A
VGS=1.8V, ID =2.0A
DYNAMIC PARAMETERS
Input Capacitance Output Capacitance Reverse Transfe...
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| Datasheet |
 PDM6T20V3 Datasheet 199.46KB |
