| Part Number | PDB2116M |
| Manufacturer | Potens semiconductor |
| Title | N+P Dual Channel MOSFETs |
| Description | These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technolog... |
| Features |
Fast switching Green Device Available Suit for 1.8V Gate Drive Applications Applications Notebook Load Switch Networking Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Pa... |
| Datasheet |
 PDB2116M Datasheet
|
