| Part Number | LN175 |
| Manufacturer | Panasonic Semiconductor |
| Title | GaAlAs Infrared Light Emitting Diode |
| Description | Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems 1.5±0.2 F... |
| Features |
High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.)
3.9±0.25
4....
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| Datasheet |
 LN175 Datasheet
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