Part Number | NTH4L160N120SC1 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Title | SiC MOSFET |
Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L NTH4L160N120SC1 Features • Typ. RDS(on) = 16... |
Features |
• Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on sec... |
Datasheet | NTH4L160N120SC1 Datasheet |