Part Number | NTH4L060N090SC1 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Title | SiC MOSFET |
Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, TO-247-4L NTH4L060N090SC1 Features • Typ. RDS(on) = 60 m... |
Features |
• Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 87 nC) • Low Effective Output Capacitance (typ. Coss = 113 pF) • 100% UIL Tested • This Device is Halide Free and RoHS Compliant with exempt... |
Datasheet | NTH4L060N090SC1 Datasheet |