Part Number | NTH4L025N065SC1 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Title | SiC MOSFET |
Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, TO-247-4L NTH4L025N065SC1 Features • Typ. RDS(on) = 19 m... |
Features |
• Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Capacitance (Coss = 278 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a,... |
Datasheet | NTH4L025N065SC1 Datasheet |