| Part Number | MTB2N60E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | High Energy Power FET |
| Description | MTB2N60E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi... |
| Features |
ed for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature TMOS POWER FET 2.0 AMPERES, 600 VOLTS RDS(on) = 3.8 W CASE 418B−02, Style 2 D2PAK D ®G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value... |
| Datasheet |
 MTB2N60E Datasheet
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