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HGTG30N60C3D

ON Semiconductor
Part Number HGTG30N60C3D
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Title N-Channel IGBT
Description UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D The HGTG30N60C3D is a MOS gated high voltage switching devi...
Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is...

Datasheet PDF File HGTG30N60C3D Datasheet

HGTG30N60C3D   HGTG30N60C3D   HGTG30N60C3D  




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