| Part Number | HGTG30N60B3D |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | N-Channel IGBT |
| Description | UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated high voltage switching devic... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used i...
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| Datasheet |
 HGTG30N60B3D Datasheet 424.40KB |
