| Part Number | HGTG10N120BND |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | N-Channel IGBT |
| Description | Symbol HGTG10N120BND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 35 A ... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189.
The ...
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| Datasheet |
 HGTG10N120BND Datasheet
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