Part Number | HGT1S7N60A4DS |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Title | N-Channel IGBT |
Description | Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110... |
Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT use...
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Datasheet | HGT1S7N60A4DS Datasheet |