| Part Number | Si4606 |
| Manufacturer | Nanxin |
| Title | N+P Complementary Enhancement MOSFET |
| Description | 1 Si4606 N-Channel Electrical Characteristics at Ta=250C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Dr... |
| Features |
·Low On resistance. ·+4.5V drive. ·RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Volta... |
| Datasheet |
 Si4606 Datasheet 465.83KB |
