| Part Number | BLS6G3135-120 |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Title | LDMOS S-Band radar power transistor |
| Description | 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance ... |
| Features |
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efficiency = 43 % I Easy power control I Integrated ESD prot...
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| Datasheet |
 BLS6G3135-120 Datasheet 106.19KB |
