| Part Number | BLS6G2933S-130 |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Title | LDMOS S-band radar power transistor |
| Description | 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance ... |
| Features |
I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efficiency = 47 % I Easy power control I Integrated ESD pr...
|
| Datasheet |
 BLS6G2933S-130 Datasheet 116.11KB |
