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BLS6G2731-6G

NXP Semiconductors
Part Number BLS6G2731-6G
Manufacturer NXP (https://www.nxp.com/) Semiconductors
Title LDMOS S-Band radar power transistor
Description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at...
Features I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Power gain = 15 dB N Efficiency = 33 % I Integrated ESD protection I High flexibilit...

Datasheet PDF File BLS6G2731-6G Datasheet

BLS6G2731-6G   BLS6G2731-6G   BLS6G2731-6G  




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