| Part Number | PHN210 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | Dual N-channel enhancement mode TrenchMOS transistor |
| Description | Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • ... |
| Features |
• Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package PHN210 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 30 V ID = 3.4 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s1 g1 s2 g2 ... |
| Datasheet |
 PHN210 Datasheet
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