| Part Number | PHD10N10E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | Transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in S... |
| Features |
r dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 30 11 7.7 44 60 175 175 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAME...
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| Datasheet |
 PHD10N10E Datasheet 76.28KB |
