| Part Number | PHB2N50 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | PowerMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capab... |
| Features |
ar derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; s...
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| Datasheet |
 PHB2N50 Datasheet 59.96KB |
