| Part Number | PHB18NQ10T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | N-channel TrenchMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters •... |
| Features |
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 18 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’... |
| Datasheet |
 PHB18NQ10T Datasheet 121.82KB |
