| Part Number | PHB12NQ15T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | N-channel TrenchMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resista... |
| Features |
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 150 V ID = 12.5 A g RDS(ON) ≤ 200 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope usin... |
| Datasheet |
 PHB12NQ15T Datasheet 111.85KB |
