| Part Number | A5G35H120N |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | Airfast RF Power GaN Transistor |
| Description | A5G35H120N Airfast RF Power GaN Transistor Rev. 2 — April 2023 This 18 W asymmetrical Doherty RF power GaN transistor is designed for cellular ba... |
| Features |
• High terminal impedances for optimal broadband performance • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Designed for low complexity line... |
| Datasheet |
 A5G35H120N Datasheet
|
