| Part Number | NTE102 |
| Manufacturer | NTE |
| Title | Germanium Complementary Transistors |
| Description | The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D... |
| Features |
D Low Collector –Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter –Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector –Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . .... |
| Datasheet |
 NTE102 Datasheet
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