| Part Number | NCE55H12 |
| Manufacturer | NCE Power Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app... |
| Features |
● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ●... |
| Datasheet |
 NCE55H12 Datasheet 393.19KB |
