| Part Number | NCE30H10G |
| Manufacturer | NCE Power Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The NCE30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap... |
| Features |
● VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat... |
| Datasheet |
 NCE30H10G Datasheet 302.08KB |
