| Part Number | NCE20PK0402J |
| Manufacturer | NCE Power Semiconductor |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | The NCE20PK0402J uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the imp... |
| Features |
MOSFET
● VDS = -20V,ID = -4A RDS(ON) < 80mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 160mΩ @ VGS=-1.8V Schottky Diode ● VKA(V) = 20V, IF = 2A, VF<[email protected] Schematic diagram Marking and pin assignment Application ● Bidirectional blocking ... |
| Datasheet |
 NCE20PK0402J Datasheet
|
