| Part Number | NCE02H10T |
| Manufacturer | NCE Power Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The NCE02H10T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap... |
| Features |
● VDS =200V,ID =100A RDS(ON) <18mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special proc... |
| Datasheet |
 NCE02H10T Datasheet 337.12KB |
