| Part Number | NCE01P03S |
| Manufacturer | NCE Power Semiconductor |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap... |
| Features |
● VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) RDS(ON) <230mΩ @ VGS=-4.5V (Typ:200mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density celldesign for ultra low on-resistance Schemat... |
| Datasheet |
 NCE01P03S Datasheet
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