| Part Number | MTY10N100E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY10N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's M... |
| Features |
PERES 1000 VOLTS RDS(on) = 1.3 OHM
®
D
G S Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS RθJC RθJA TL
CASE 340G –02, STYLE 1 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ... |
| Datasheet |
 MTY10N100E Datasheet 228.66KB |
