Part Number | MTW8N60E |
Manufacturer | Motorola |
Title | TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Iso... |
Features |
ource –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATING... |
Datasheet | MTW8N60E Datasheet |