| Part Number | MTB4N80E1 |
| Manufacturer | Motorola |
| Title | TMOS POWER FET |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight ... |
| Features |
t Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation MTB4N80E1 Motorola... |
| Datasheet |
 MTB4N80E1 Datasheet 160.35KB |
