| Part Number | MTB3N60E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N60E/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK for Surface M... |
| Features |
ry Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –repetitive Drain Current — ... |
| Datasheet |
 MTB3N60E Datasheet 74.47KB |
