Part Number | RD100HHF1 |
Manufacturer | Mitsubishi Electric Semiconductor |
Title | MOS FET |
Description | RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 •High p... |
Features |
9.6+/-0.3
0.1 -0.01
3
+0.05
R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS...
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Datasheet | RD100HHF1 Datasheet |