| Part Number | RD07MVS1B |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | Silicon RF Power MOSFET |
| Description | RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 amplifiers applic... |
| Features |
Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
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0.2+/-0.05
0.9+/-0.1
High power gain:
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNI...
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| Datasheet |
 RD07MVS1B Datasheet
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