| Part Number | RD01MUS2B |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | Silicon MOSFET Power Transistor |
| Description | RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener ... |
| Features |
•High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 MIN 2.5+/-0.1 4.4+/-0.1 1.6+/-0.1 LOT No. 1 0. φ 1.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 ... |
| Datasheet |
 RD01MUS2B Datasheet 3.81MB |
